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NTD3055L104-1G

Manufacturer:

On Semiconductor

Mfr.Part #:

NTD3055L104-1G

Datasheet:
Description:

MOSFETs DPAK-3 Through Hole N-Channel number of channels:1 48 W 60 V Continuous Drain Current (ID):12 A 7.4 nC

ParameterValue
Voltage Rating (DC)60 V
Length6.73 mm
Width6.22 mm
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Pins4
Height2.38 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Current Rating25 A
Max Power Dissipation48 W
Power Dissipation48 W
Threshold Voltage1.6 V
Number of Channels1
Input capacitance440 pF
Continuous Drain Current (ID)12 A
Rds On Max104 mΩ
Drain to Source Voltage (Vdss)60 V
Turn-On Delay Time9.2 ns
Turn-Off Delay Time19 ns
Element ConfigurationSingle
Fall Time40.5 ns
Rise Time104 ns
Gate Charge7.4 nC
Drain to Source Resistance104 mΩ
Nominal Vgs2 V
Gate to Source Voltage (Vgs)15 V
Drain to Source Breakdown Voltage (Vds)60 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)N-Channel

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